类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Not For New Designs |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 9A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4V, 10V |
rds on (max) @ id, vgs: | 225mOhm @ 3A, 10V |
vgs(th) (最大值) @ id: | 2.6V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 9.8 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 490 pF @ 20 V |
场效应管特征: | - |
功耗(最大值): | 1W (Ta), 19W (Tc) |
工作温度: | 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | DPAK/TP-FA |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SUM65N20-30-E3Vishay / Siliconix |
MOSFET N-CH 200V 65A TO263 |
|
SIJ128LDP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 10.2A/25.5A PPAK |
|
RRH090P03TB1ROHM Semiconductor |
MOSFET P-CH 30V 9A 8SOP |
|
FQPF12P20XDTURochester Electronics |
MOSFET P-CH 200V 7.3A TO-220F |
|
IPAW60R280P7SE8228XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 12A TO220 |
|
PMV450ENEARNexperia |
MOSFET N-CH 60V 800MA TO236AB |
|
FQB70N10TMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SPW11N60CFDFKSA1Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 1 |
|
SFR9210TMRochester Electronics |
P-CHANNEL POWER MOSFET |
|
2SK2373ZE-TL-ERochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
RS1E350GNTBROHM Semiconductor |
MOSFET N-CH 30V 35A/80A 8HSOP |
|
IPD60R600P7SE8228AUMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 6A TO252-3 |
|
APT100F50JRoving Networks / Microchip Technology |
MOSFET N-CH 500V 103A ISOTOP |