English
简体中文
MOSFET P-CH 20V 5A DFN2020MD-6
XGIE 2PR STRANDED FSHIELD 1000'
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchMOS™ |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 48mOhm @ 5A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 23.4 nC @ 4.5 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 1.55 nF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.7W (Ta), 12.5W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DFN2020MD-6 |
| 包/箱: | 6-UDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIHF530STRL-GE3Vishay / Siliconix |
MOSFET N-CH 100V 14A D2PAK |
|
HUF76429D3STRochester Electronics |
MOSFET N-CH 60V 20A TO252AA |
|
SQ1431EH-T1_GE3Vishay / Siliconix |
MOSFET P-CH 30V 3A SC70-6 |
|
SI8466EDB-T2-E1Vishay / Siliconix |
MOSFET N-CH 8V 4MICROFOOT |
|
AOTF2606LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 13A/54A TO220-3F |
|
SIS415DNT-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 35A PPAK1212-8 |
|
IPD75N04S4-06Rochester Electronics |
IPD75N04 - 20V-40V N-CHANNEL AUT |
|
NDBA100N10BT4HRochester Electronics |
MOSFET N-CH 100V 100A D2PAK |
|
QS5U21TRROHM Semiconductor |
MOSFET P-CH 20V 1.5A TSMT5 |
|
BSC050N03LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 18A/80A TDSON |
|
IRLR2908PBFRochester Electronics |
HEXFET POWER MOSFET |
|
SQ3427EV-T1_BE3Vishay / Siliconix |
MOSFET P-CH 60V 5.3A 6TSOP |
|
NTLUS4930NTBGRochester Electronics |
MOSFET N-CH 30V 3.8A 6UDFN |