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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
STP14NF10STMicroelectronics |
MOSFET N-CH 100V 15A TO220AB |
|
FDS5672Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 12A 8SOIC |
|
AOT414Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 5.6A/43A TO220 |
|
FQA90N08Rochester Electronics |
MOSFET N-CH 80V 90A TO3PN |
|
IXFN200N10PWickmann / Littelfuse |
MOSFET N-CH 100V 200A SOT-227B |
|
TSM35N10CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 100V 32A TO252 |
|
PSMN9R0-25YLC,115Rochester Electronics |
MOSFET N-CH 25V 46A LFPAK56 |
|
APT5014BLLGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 35A TO247 |
|
NVB5860NT4GRochester Electronics |
MOSFET N-CH 60V 220A D2PAK-3 |
|
STI260N6F6STMicroelectronics |
MOSFET N-CH 75V 120A I2PAK |
|
DMTH8008SPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 80V 92A PWRDI5060-8 |
|
IRF540NSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 33A D2PAK |
|
IRF143Rochester Electronics |
MOSFET N-CH 60V 24A TO3 |
