类型 | 描述 |
---|---|
系列: | TrenchFET® |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 13.2A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 134mOhm @ 4A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 55 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1480 pF @ 50 V |
场效应管特征: | - |
功耗(最大值): | 3.7W (Ta), 52W (Tc) |
工作温度: | -50°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerPAK® 1212-8 |
包/箱: | PowerPAK® 1212-8 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
RSH065N03TB1ROHM Semiconductor |
MOSFET N-CH 30V 6.5A 8SOP |
|
RSQ030P03TRROHM Semiconductor |
MOSFET P-CH 30V 3A TSMT6 |
|
IXFX64N50PWickmann / Littelfuse |
MOSFET N-CH 500V 64A PLUS247-3 |
|
NTS4173PT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 1.2A SC70-3 |
|
IPW65R048CFDAFKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 63.3A TO247-3 |
|
BUK964R8-60E,118Nexperia |
MOSFET N-CH 60V 100A D2PAK |
|
STW75N60M6STMicroelectronics |
MOSFET N-CH 600V 72A TO247 |
|
AO4492Alpha and Omega Semiconductor, Inc. |
MOSFET N CH 30V 14A 8SOIC |
|
STP32NM50NSTMicroelectronics |
MOSFET N CH 500V 22A TO-220 |
|
APTC60DAM18CTGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 143A SP4 |
|
IPB80N06S209ATMA2Rochester Electronics |
MOSFET N-CH 55V 80A TO263-3-2 |
|
IRF7805ZTRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 16A 8SO |
|
IPW60R037CSFDXKSA1IR (Infineon Technologies) |
MOSFET N CH |