English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
2N7002PS/ZL115Rochester Electronics |
N-CHANNEL SMALL SIGNAL MOSFET |
|
BSZ088N03LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 12A/40A 8TSDSON |
|
SQ2337ES-T1_GE3Vishay / Siliconix |
MOSFET P-CH 80V 2.2A SOT23-3 |
|
IRFR024PBFVishay / Siliconix |
MOSFET N-CH 60V 14A DPAK |
|
IPC90N04S53R6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 90A 8TDSON-34 |
|
SI7108DN-T1-E3Vishay / Siliconix |
MOSFET N-CH 20V 14A PPAK1212-8 |
|
STFH24N60M2STMicroelectronics |
MOSFET N-CH 600V 18A TO220FP |
|
DMT6008LFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 13A PWRDI3333 |
|
PSMN8R0-30LYC115Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NVC3S5A51PLZT1GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 1.8A 3CPH |
|
SI4186DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 35.8A 8SO |
|
IPB80N06S4L07ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 80A TO263-3 |
|
DN3545N8-GRoving Networks / Microchip Technology |
MOSFET N-CH 450V 200MA TO243AA |
