English
简体中文
MOSFET N-CH 60V 80A 8QFN
MODULE THYRISTOR 60A ADD-A-PAK
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 60 V |
| 电流 - 连续漏极 (id) @ 25°c: | 80A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 3.6mOhm @ 40A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 56 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3500 pF @ 30 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 80W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-QFN (5x6) |
| 包/箱: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BSZ100N06NSATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 40A TSDSON |
|
IPP045N10N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 100A TO220-3 |
|
NVTFS5124PLTAGSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 2.4A 8WDFN |
|
STF12N65M5STMicroelectronics |
MOSFET N-CH 650V 8.5A TO220FP |
|
IPW65R070C6FKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 53.5A TO247-3 |
|
IPP093N06N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 50A TO220-3 |
|
IRFH7932TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 24A/104A PQFN |
|
SIHA18N60E-E3Vishay / Siliconix |
MOSFET N-CHANNEL 600V 18A TO220 |
|
SPP12N50C3XKSA1Rochester Electronics |
MOSFET N-CH 500V 11.6A TO220-3 |
|
AON3414Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 10.5A 8DFN |
|
NVTFWS004N04CTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 18A/77A 8WDFN |
|
EPC8004EPC |
GANFET N-CH 40V 2.7A DIE |
|
IPS031N03LGAKMA1Rochester Electronics |
MOSFET N-CH 30V 90A TO251-31 |