English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q101, TrenchPLUS™ |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 75A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 7mOhm @ 50A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 116 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 4500 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 272W (Ta) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-5, D²Pak (4 Leads + Tab), TO-263BB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MGSF3433VT1Rochester Electronics |
PFET TSOP6S 20V 0.098R TR |
|
CSD19505KCSTexas Instruments |
MOSFET N-CH 80V 150A TO220-3 |
|
SQ2362ES-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 4.3A SOT23-3 |
|
STF26N65DM2STMicroelectronics |
MOSFET N-CH 650V 20A TO220FP |
|
STW15NK50ZSTMicroelectronics |
MOSFET N-CH 500V 14A TO247-3 |
|
IRFS7434-7PPBFRochester Electronics |
MOSFET N-CH 40V 240A D2PAK |
|
IPB100N06S2L05ATMA2IR (Infineon Technologies) |
MOSFET N-CH 55V 100A TO263-3 |
|
NTMFS5C612NLWFT1GRochester Electronics |
MOSFET N-CH 60V 235A 5DFN |
|
IPP50R380CEXKSA1IR (Infineon Technologies) |
MOSFET N-CH 500V 9.9A TO220-3 |
|
AOSS32338CAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 4A SOT23-3 |
|
NTGS3433T1GRochester Electronics |
MOSFET P-CH 12V 2.35A 6TSOP |
|
TSM2314CX RFGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 20V 4.9A SOT23 |
|
HUF75842P3Rochester Electronics |
MOSFET N-CH 150V 43A TO220-3 |
