English
简体中文
FIXED IND 2NH 600MA 150 MOHM SMD
MOSFET N-CH 30V 5.3A PWRDI3333-8
CORD 18AWG NEMA 5-15P TO CBL 12'
4-PORT GBE ITAM MODULE WITH SFP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5.3A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 18mOhm @ 10A, 10V |
| vgs(th) (最大值) @ id: | 2.1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 17.4 nC @ 10 V |
| vgs (最大值): | ±25V |
| 输入电容 (ciss) (max) @ vds: | 751 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 900mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerDI3333-8 |
| 包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI2343DS-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 3.1A SOT23-3 |
|
MTW16N40ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
RD3P175SNFRATLROHM Semiconductor |
MOSFET N-CH 100V 17.5A TO252 |
|
IRF730PBF-BE3Vishay / Siliconix |
MOSFET N-CH 400V 5.5A TO220AB |
|
BS170-D74ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 500MA TO92-3 |
|
SUD90330E-GE3Vishay / Siliconix |
MOSFET N-CH 200V 35.8A TO252AA |
|
STB7NK80Z-1STMicroelectronics |
MOSFET N-CH 800V 5.2A I2PAK |
|
FDMS7680Rochester Electronics |
MOSFET N-CH 30V 14A/28A 8PQFN |
|
IXTT80N20LWickmann / Littelfuse |
MOSFET N-CH 200V 80A TO268 |
|
MCH5839-TL-WRochester Electronics |
MOSFET P-CH 20V 1.5A SC88AFL |
|
BUK766R0-60E,118Rochester Electronics |
MOSFET N-CH 60V 75A D2PAK |
|
IPW65R190CFD7AXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 14A TO247-3 |
|
PMN50EPEXNexperia |
MOSFET P-CH 30V 4.6A 6TSOP |