English
简体中文
MOSFET P-CH 600V 32A PLUS247-3
CBL ASSY 4POS MALE TO FMALE 0.5M
CBL FMALE TO WIRE LEAD 12P 1.64'
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PolarP™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 32A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 350mOhm @ 16A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 196 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 11100 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 890W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PLUS247™-3 |
| 包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPI80N04S3-06Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDS6575Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 10A 8SOIC |
|
IRF6714MTRPBFRochester Electronics |
MOSFET N-CH 25V 29A/166A DIRECT |
|
MVGSF1N02LT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 750MA SOT23-3 |
|
TK12A80W,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 800V 11.5A TO220SIS |
|
IRFW620BTMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SUD50N04-09H-E3Vishay / Siliconix |
MOSFET N-CH 40V 50A TO252 |
|
SQJQ466E-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 200A PPAK 8 X 8 |
|
TSM70N600CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 700V 8A TO252 |
|
SUM45N25-58-E3Vishay / Siliconix |
MOSFET N-CH 250V 45A TO263 |
|
DMN31D5L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 500MA SOT23 T&R |
|
SQD10950E_GE3Vishay / Siliconix |
MOSFET N-CH 250V 11.5A TO252AA |
|
RCJ220N25TLROHM Semiconductor |
MOSFET N-CH 250V 22A LPTS |