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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
APT60M75L2LLGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 73A 264 MAX |
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RCD100N19TLROHM Semiconductor |
MOSFET N-CH 190V 10A CPT3 |
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TK5A65DA(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 4.5A TO220SIS |
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NTMFS4H01NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 54A/334A 5DFN |
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NTMFS5C426NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 41A/235A 5DFN |
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TK155A65Z,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 650V 18A TO220SIS |
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AOWF7S60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 7A TO262F |
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YJD45G10A-F1-0000HF |
N-CH MOSFET 100V 45A TO-252 |
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IRLU120NPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 10A IPAK |
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APT45M100JRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 45A SOT227 |
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2SK4198FSRochester Electronics |
MOSFET N-CH 600V 4A TO220-3 |
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2SK1628-ERochester Electronics |
N-CHANNEL POWER MOSFET |
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IPB65R110CFDATMA2IR (Infineon Technologies) |
MOSFET N-CH 650V 31.2A TO263-3 |
