English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.38Ohm @ 2.5A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 15 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 586 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 89W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220 |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI7818DN-T1-E3Vishay / Siliconix |
MOSFET N-CH 150V 2.2A PPAK1212-8 |
|
IPN50R800CEATMA1Rochester Electronics |
IPN50R800 - 500V COOLMOS N-CHANN |
|
IRF1104PBFIR (Infineon Technologies) |
MOSFET N-CH 40V 100A TO220AB |
|
STD7N60M2STMicroelectronics |
MOSFET N-CH 600V 5A DPAK |
|
IPP80R450P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 11A TO220-3 |
|
NTD20N03L27T4Rochester Electronics |
MOSFET N-CH 30V 20A DPAK |
|
FDP55N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 55A TO220-3 |
|
IPI80N06S2L05AKSA2Rochester Electronics |
MOSFET N-CH 55V 80A TO262-3 |
|
FDMS86550Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 32A/155A POWER56 |
|
AOW11S65Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 11A TO262 |
|
BUK7606-55B,118Nexperia |
MOSFET N-CH 55V 75A D2PAK |
|
DMN2013UFDE-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 10.5A 6UDFN |
|
IPW60R230P6FKSA1Rochester Electronics |
MOSFET N-CH 600V 16.8A TO247-3 |
