English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | POWER MOS 8™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 1200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 29A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 560mOhm @ 14A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 2.5mA |
| 栅极电荷 (qg) (max) @ vgs: | 300 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 9670 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1135W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | T-MAX™ [B2] |
| 包/箱: | TO-247-3 Variant |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI5618-TPMicro Commercial Components (MCC) |
MOSFET P-CH 60V 1.9A SOT23 |
|
DMT10H015LFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V PWRDI3333 |
|
MTM862270LBFPanasonic |
MOSFET N-CH 20V 2.2A WSSMINI6-F1 |
|
APT7F120SRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 7A D3PAK |
|
FDBL0150N80Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 300A 8HPSOF |
|
IPA80R450P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 11A TO220-3F |
|
IPT60R035CFD7XTMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 67A 8HSOF |
|
IPB180P04P4L02ATMA2IR (Infineon Technologies) |
MOSFET P-CH 40V 180A TO263-7 |
|
IRF730APBFVishay / Siliconix |
MOSFET N-CH 400V 5.5A TO220AB |
|
IRLL3303PBFRochester Electronics |
MOSFET N-CH 30V 4.6A SOT223 |
|
BUK764R4-60E,118Nexperia |
MOSFET N-CH 60V 100A D2PAK |
|
CSD19538Q3ATexas Instruments |
MOSFET N-CH 100V 15A 8VSON |
|
IRFRC20TRLPBFVishay / Siliconix |
MOSFET N-CH 600V 2A DPAK |
