类型 | 描述 |
---|---|
系列: | STripFET™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 11A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 12mOhm @ 5.5A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 17 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 1035 pF @ 30 V |
场效应管特征: | - |
功耗(最大值): | 2.9W (Ta), 48W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerFlat™ (3.3x3.3) |
包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
DMT6012LFDF-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 9.5A 6UDFN |
|
SIHA180N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 19A TO220 |
|
IRLR8721TRPBFRochester Electronics |
HEXFET POWER MOSFET |
|
TSM3N80CI C0GTSC (Taiwan Semiconductor) |
MOSFET N-CH 800V 3A ITO220AB |
|
NTMFS5H409NLT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 41A/270A 5DFN |
|
IRFR3707PBFRochester Electronics |
MOSFET N-CH 30V 61A DPAK |
|
MCH6448-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 8A 6MCPH |
|
IPD25N06S4L30ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 25A TO252-31 |
|
FQB10N20LTMRochester Electronics |
MOSFET N-CH 200V 10A D2PAK |
|
SIR826DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 60A PPAK SO-8 |
|
SI2308CDS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 2.6A SOT23-3 |
|
SSF7N60BRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXTY2N65X2Wickmann / Littelfuse |
MOSFET N-CH 650V 2A TO252 |