English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SuperMESH5™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 800 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 950mOhm @ 3A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 16.5 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 450 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 110W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DPAK |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AUIRFP064NRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
IPD60R180C7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 13A TO252-3 |
|
BSS225H6327FTSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 90MA SOT89 |
|
FDD390N15ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 150V 26A DPAK |
|
UPA2803T1L-E2-AYRochester Electronics |
MOSFET N-CH 20V 20A 8DFN |
|
FQU7N20TURochester Electronics |
MOSFET N-CH 200V 5.3A IPAK |
|
IXFT150N17T2Wickmann / Littelfuse |
MOSFET N-CH 175V 150A TO268HV |
|
IPD30N06S2L13ATMA1Rochester Electronics |
IPD30N06 - 55V-60V N-CHANNEL AUT |
|
SIJH440E-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 200A PPAK 8 X 8 |
|
IXFQ72N30X3Wickmann / Littelfuse |
MOSFET N-CH 300V 72A TO3P |
|
FQD13N06LTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 11A DPAK |
|
BSN20-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 50V 500MA SOT23 |
|
IRFB7540PBFIR (Infineon Technologies) |
MOSFET N-CH 60V 110A TO220 |
