MOSFET N-CH 60V 90A TO252-3
INTRINSICALLY SAFE HEADLAMP-200
类型 | 描述 |
---|---|
系列: | U-MOSVIII-H |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 60 V |
电流 - 连续漏极 (id) @ 25°c: | 90A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 3.3mOhm @ 45A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 500µA |
栅极电荷 (qg) (max) @ vgs: | 81 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 5400 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 157W (Tc) |
工作温度: | 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-252-3 |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
T2N7002AK,LMToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 200MA SOT23 |
|
NVTFS6H888NWFTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 4.7A/12A 8WDFN |
|
BUZ32HXKSA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
RM5A1P30S6Rectron USA |
MOSFET P-CH 30V 5.1A SOT23-6 |
|
TP2520N8-GRoving Networks / Microchip Technology |
MOSFET P-CH 200V 260MA TO243AA |
|
RUQ050N02HZGTRROHM Semiconductor |
MOSFET N-CH 20V 5A TSMT6 |
|
TPN22006NH,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 9A 8TSON |
|
E3M0120090JWolfspeed - a Cree company |
900V 120M AUTOMOTIVE SIC MOSFET |
|
BSL207SPH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 20V 6A TSOP-6 |
|
BUK7Y15-60EXNexperia |
MOSFET N-CH 60V 53A LFPAK56 |
|
PMZB390UNE315Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
RM50P30DFRectron USA |
MOSFET P-CHANNEL 30V 50A 8DFN |
|
NVMFS5C673NLWFAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CHANNEL 60V 50A 5DFN |