MOSFET N-CH 55V 120A D2PAK
M25X1.5 HP CORD GRIP PA/TPE
类型 | 描述 |
---|---|
系列: | HEXFET® |
包裹: | Tube |
零件状态: | Not For New Designs |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 55 V |
电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 4.9mOhm @ 88A, 10V |
vgs(th) (最大值) @ id: | 4V @ 150µA |
栅极电荷 (qg) (max) @ vgs: | 230 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 5360 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 230W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | D2PAK (7-Lead) |
包/箱: | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NX5008NBKMYLNexperia |
MOSFET N-CH 50V 350MA DFN1006-3 |
|
IRFU3806PBFRochester Electronics |
MOSFET N-CH 60V 43A IPAK |
|
IAUS240N08S5N019ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 240A HSOG-8 |
|
SIHG22N60E-E3Vishay / Siliconix |
MOSFET N-CH 600V 21A TO247AC |
|
SQJ488EP-T1_GE3Vishay / Siliconix |
MOSFET N-CH 100V 42A PPAK SO-8 |
|
R5011ANJTLROHM Semiconductor |
MOSFET N-CH 500V 11A LPTS |
|
IXTK180N15PWickmann / Littelfuse |
MOSFET N-CH 150V 180A TO264 |
|
STP120N4F6STMicroelectronics |
MOSFET N-CH 40V 80A TO220AB |
|
MCH6344-TL-WRochester Electronics |
MOSFET P-CH 30V 2A SC88FL/MCPH6 |
|
SQ7415AENW-T1_GE3Vishay / Siliconix |
MOSFET P-CH 60V 16A PPAK1212-8 |
|
HUF76113T3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
BUK9M14-40EXNexperia |
MOSFET N-CH 40V 44A LFPAK33 |
|
CPH6614-TL-ERochester Electronics |
P-CHANNEL SILICON MOSFET |