English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (vdss): | - |
| 电流 - 连续漏极 (id) @ 25°c: | - |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | - |
| vgs(th) (最大值) @ id: | - |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | - |
| 输入电容 (ciss) (max) @ vds: | - |
| 场效应管特征: | - |
| 功耗（最大值）: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
BUK9M14-40EXNexperia |
MOSFET N-CH 40V 44A LFPAK33 |
|
CPH6614-TL-ERochester Electronics |
P-CHANNEL SILICON MOSFET |
|
IRF820Rochester Electronics |
2.5A, 500V, 3.000 OHM, N-CHANNEL |
|
IXTT500N04T2Wickmann / Littelfuse |
MOSFET N-CH 40V 500A TO268 |
|
TN2425N8-GRoving Networks / Microchip Technology |
MOSFET N-CH 25V 480MA SOT89-3 |
|
TK6A60W,S4VXToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 6.2A TO220SIS |
|
FDB86102LZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 8.3A/30A TO263 |
|
STH10N80K5-2AGSTMicroelectronics |
MOSFET N-CH 800V 8A H2PAK-2 |
|
FQI6N40CTURochester Electronics |
MOSFET N-CH 400V 6A I2PAK |
|
TPCA8064-H,LQ(CMToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 20A 8SOP |
|
CPH6445-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 3.5A 6CPH |
|
RM6N800IPRectron USA |
MOSFET N-CHANNEL 800V 6A TO251 |
|
IAUC120N04S6L008ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 120A 8TDSON-33 |
