类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | 1.5V, 4.5V |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±6V |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-723 |
包/箱: | SOT-723 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SQ3427AEEV-T1_BE3Vishay / Siliconix |
MOSFET P-CH 60V 5.3A 6TSOP |
|
FDMS86181Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 44A/124A 8PQFN |
|
DMP2023UFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 7.6A 6UDFN |
|
NTMFS5C628NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 5DFN |
|
BSM400C12P3G202ROHM Semiconductor |
SICFET N-CH 1200V 400A MODULE |
|
RJK6014DPP-E0#T2Rochester Electronics |
POWER FIELD-EFFECT TRANSISTOR |
|
IPP60R125CFD7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 18A TO220-3 |
|
SIHA22N60E-E3Vishay / Siliconix |
MOSFET N-CH 600V 21A TO220 |
|
SI7478DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 15A PPAK SO-8 |
|
SPD18P06PRochester Electronics |
MOSFET P-CH 60V 18.6A TO252-3 |
|
BUK7Y12-55B,115Nexperia |
MOSFET N-CH 55V 61.8A LFPAK56 |
|
STP80NF10STMicroelectronics |
MOSFET N-CH 100V 80A TO220AB |
|
STP9NK65ZSTMicroelectronics |
MOSFET N-CH 650V 6.4A TO220AB |