English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | G3R™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | SiCFET (Silicon Carbide) |
| 漏源电压 (vdss): | 1200 V |
| 电流 - 连续漏极 (id) @ 25°c: | 22A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 15V |
| rds on (max) @ id, vgs: | 192mOhm @ 10A, 15V |
| vgs(th) (最大值) @ id: | 2.69V @ 5mA |
| 栅极电荷 (qg) (max) @ vgs: | 28 nC @ 15 V |
| vgs (最大值): | ±15V |
| 输入电容 (ciss) (max) @ vds: | 730 pF @ 800 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 128W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-263-7 |
| 包/箱: | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI3460BDV-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 8A 6TSOP |
|
RJL60S5DPP-E0#T2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
STD95N4LF3STMicroelectronics |
MOSFET N-CH 40V 80A DPAK |
|
ZXMN6A08GQTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 3.8A SOT223 |
|
IRF1310NPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 42A TO220AB |
|
RSD100N10TLROHM Semiconductor |
MOSFET N-CH 100V 10A CPT3 |
|
SIHG22N60AEL-GE3Vishay / Siliconix |
MOSFET N-CH 600V 21A TO247AC |
|
IPB011N04LGATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 180A TO263-7 |
|
IRF530NSTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 17A D2PAK |
|
DMN1019UFDE-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N CH 12V 11A U-DFN2020-6E |
|
2SK3993-ZK-E1-AZRochester Electronics |
MOSFET N-CH 25V 64A TO252 |
|
CPH6443-P-TL-HRochester Electronics |
MOSFET N-CH 6CPH |
|
NDS9430ARochester Electronics |
MOSFET P-CH 20V 5.3A 8SOIC |
