RES 6.65 OHM 1W 1% WW AXIAL
ERL-20-11 300 2% T-1 RLR20C3000G
MOSFET P-CH 50V 180MA TO236AB
XTAL OSC VCXO 125.0000MHZ CMOS
类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, TrenchMOS™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 50 V |
电流 - 连续漏极 (id) @ 25°c: | 180mA (Ta) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 7.5Ohm @ 100mA, 10V |
vgs(th) (最大值) @ id: | 2.1V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 0.35 nC @ 5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 36 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 350mW (Ta), 1.14W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-236AB |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PSMN8R7-80BS,118Nexperia |
MOSFET N-CH 80V 90A D2PAK |
|
BSR316PH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 100V 360MA SC59 |
|
DMP3105LVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 3.1A TSOT23-6 |
|
SIB406EDK-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 6A PPAK SC75-6 |
|
PMV75UP,215Nexperia |
MOSFET P-CH 20V 2.5A TO236AB |
|
DMPH4029LFGQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V 8A/22A PWRDI3333 |
|
TK7A45DA(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 450V 6.5A TO220SIS |
|
STB33N60M2STMicroelectronics |
MOSFET N-CH 600V 26A D2PAK |
|
SPA08N50C3XKRochester Electronics |
N-CHANNEL POWER MOSFET |
|
R6515KNJTLROHM Semiconductor |
MOSFET N-CH 650V 15A LPTS |
|
FQPF17N40TRochester Electronics |
MOSFET N-CH 400V 9.5A TO220F |
|
R6009ENJTLROHM Semiconductor |
MOSFET N-CH 600V 9A LPTS |
|
NTLJF3118NTAGRochester Electronics |
MOSFET N-CH 20V 2.6A 6WDFN |