类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, PowerTrench® |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 32A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 27mOhm @ 8.4A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 27 nC @ 5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2.38 pF @ 20 V |
场效应管特征: | - |
功耗(最大值): | 83W (Tj) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | TO-252, (D-Pak) |
包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPP50R299CPXKSA1Rochester Electronics |
COOLMOS N-CHANNEL POWER MOSFET |
|
NTD32N06L-1GRochester Electronics |
MOSFET N-CH 60V 32A IPAK |
|
NTD50N03RGRochester Electronics |
MOSFET N-CH 25V 7.8A/45A DPAK |
|
2SK2008-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDB33N25TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 33A D2PAK |
|
HUF76121D3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
RM5N650IPRectron USA |
MOSFET N-CHANNEL 650V 5A TO251 |
|
SI3134KE-TPMicro Commercial Components (MCC) |
MOSFET N-CH 20V 750MA SOT523 |
|
TSM3401CX RFGTSC (Taiwan Semiconductor) |
MOSFET P-CHANNEL 30V 3A SOT23 |
|
IPD90N08S405ATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 90A TO252-3 |
|
CSD25481F4TTexas Instruments |
MOSFET P-CH 20V 2.5A 3PICOSTAR |
|
IXTH02N450HVWickmann / Littelfuse |
MOSFET N-CH 4500V 200MA TO247HV |
|
APTM10UM01FAGRoving Networks / Microchip Technology |
MOSFET N-CH 100V 860A SP6 |