English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 5.5mOhm @ 75A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 100 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3000 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 140W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SIRA88DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 45.5A PPAK SO-8 |
|
SIHA20N50E-E3Vishay / Siliconix |
MOSFET N-CH 500V 19A TO220 |
|
NVMFS5C460NLWFAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 21A/78A 5DFN |
|
IRFH8330TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 17A/56A PQFN |
|
IRFZ34SPBFVishay / Siliconix |
MOSFET N-CH 60V 30A D2PAK |
|
FQPF13N06Rochester Electronics |
MOSFET N-CH 60V 9.4A TO220F |
|
IXFH28N60P3Wickmann / Littelfuse |
MOSFET N-CH 600V 28A TO247AD |
|
SIA418DJ-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 12A PPAK SC70-6 |
|
SI1499DH-T1-E3Vishay / Siliconix |
MOSFET P-CH 8V 1.6A SC70-6 |
|
IRL40SC209IR (Infineon Technologies) |
MOSFET N-CH 40V 478A D2PAK |
|
AUIRL3705ZLRochester Electronics |
MOSFET N-CH 55V 75A TO262 |
|
SIHFR420A-GE3Vishay / Siliconix |
MOSFET N-CH 500V 3.3A DPAK |
|
DMN10H120SFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V 3.8A PWRDI3333 |
