English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 18.2A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 4.7mOhm @ 23A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 14 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1740 pF @ 12 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.2W (Ta), 21W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-WDFN (3.3x3.3) |
| 包/箱: | 8-PowerWDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NTMFS4841NT1GRochester Electronics |
MOSFET N-CH 30V 8.3A/57A 5DFN |
|
STF6N62K3STMicroelectronics |
MOSFET N-CH 620V 5.5A TO220FP |
|
PSMN3R3-80PS,127Nexperia |
MOSFET N-CH 80V 120A TO220AB |
|
DMG10N60SCTZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 600V 12A TO220AB |
|
IPC70N04S5L4R2ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 70A 8TDSON-34 |
|
SIHP12N50E-GE3Vishay / Siliconix |
MOSFET N-CH 500V 10.5A TO220AB |
|
NVJS3151PT1GRochester Electronics |
MOSFET P-CH 12V 2.7A SC88 |
|
TK5A45DA(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 450V 4.5A TO220SIS |
|
BSZ011NE2LS5IATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 35A/40A TSDSON |
|
IPS80R750P7AKMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 7A TO251-3 |
|
BSS83PH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 60V 330MA SOT23-3 |
|
IRFH7446TRPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 85A 8PQFN |
|
FDP030N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 120A TO220-3 |
