English
简体中文
CAP CER 18PF 2.5KV C0G/NP0 1808
MOSFET N-CH 500V 10.5A TO220AB
MODULE DDR SDRAM 512MB 184DIMM
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 500 V |
| 电流 - 连续漏极 (id) @ 25°c: | 10.5A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 380mOhm @ 6A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 50 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 886 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 114W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
NVJS3151PT1GRochester Electronics |
MOSFET P-CH 12V 2.7A SC88 |
|
TK5A45DA(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 450V 4.5A TO220SIS |
|
BSZ011NE2LS5IATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 35A/40A TSDSON |
|
IPS80R750P7AKMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 7A TO251-3 |
|
BSS83PH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 60V 330MA SOT23-3 |
|
IRFH7446TRPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 85A 8PQFN |
|
FDP030N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 120A TO220-3 |
|
STL24N60M2STMicroelectronics |
MOSFET N-CH 600V 18A PWRFLAT HV |
|
IRF6674TRPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 13.4A DIRECTFET |
|
NTD5C668NLT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 15A/48A DPAK |
|
FK3306010LPanasonic |
MOSFET N-CH 60V 100MA SSSMINI3 |
|
FDV302PRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
IXFN48N50QWickmann / Littelfuse |
MOSFET N-CH 500V 48A SOT-227B |