English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET®, StrongIRFET™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 40 V |
| 电流 - 连续漏极 (id) @ 25°c: | 85A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 6V, 10V |
| rds on (max) @ id, vgs: | 3.3mOhm @ 50A, 10V |
| vgs(th) (最大值) @ id: | 3.9V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 98 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3174 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 78W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-PQFN (5x6) |
| 包/箱: | 8-TQFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDP030N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 120A TO220-3 |
|
STL24N60M2STMicroelectronics |
MOSFET N-CH 600V 18A PWRFLAT HV |
|
IRF6674TRPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 13.4A DIRECTFET |
|
NTD5C668NLT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 15A/48A DPAK |
|
FK3306010LPanasonic |
MOSFET N-CH 60V 100MA SSSMINI3 |
|
FDV302PRochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
IXFN48N50QWickmann / Littelfuse |
MOSFET N-CH 500V 48A SOT-227B |
|
VN4012L-GRoving Networks / Microchip Technology |
MOSFET N-CH 400V 160MA TO92-3 |
|
IXTA230N075T2-TRLWickmann / Littelfuse |
MOSFET N-CH 75V 230A TO263 |
|
TPH1R005PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 45V 150A 8SOP |
|
APT60M75JLLRoving Networks / Microchip Technology |
MOSFET N-CH 600V 58A ISOTOP |
|
DMN2026UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 6.2A TSOT-26 |
|
IPA95R1K2P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 950V 6A TO220 |
