English
简体中文
MOSFET N-CH 100V 3.3A/12A 8DFN
MOSFET N-CH 100V 6A 8SOIC
CBL FMALE RA TO WIRE 4POS 6.56'
DIP CBL - HHDM40S/AE40G/HHDM40S
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 100 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 37mOhm @ 6A, 10V |
| vgs(th) (最大值) @ id: | 2.7V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 44 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2000 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 3.1W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SOIC |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FQPF6N25Rochester Electronics |
MOSFET N-CH 250V 4A TO220F |
|
SI4413CDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 8-SOIC |
|
STP35NF10STMicroelectronics |
MOSFET N-CH 100V 40A TO220AB |
|
APT12057B2LLGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 22A T-MAX |
|
TPN30008NH,LQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 80V 9.6A 8TSON |
|
RM150N150HDRectron USA |
MOSFET N-CH 150V 150A TO263-2 |
|
SPB80N03S2L05Rochester Electronics |
80A, 30V, N-CHANNEL, MOSFET |
|
TK10E60W,S1VXToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 9.7A TO220 |
|
NTD3817NT4GRochester Electronics |
MOSFET N-CH 16V 7.6A/34.5A DPAK |
|
SQM50020EL_GE3Vishay / Siliconix |
MOSFET N-CH 60V 120A TO263 |
|
TSM260P02CX6 RFGTSC (Taiwan Semiconductor) |
MOSFET P-CHANNEL 20V 6.5A SOT26 |
|
SQM50P04-09L_GE3Vishay / Siliconix |
MOSFET P-CHANNEL 40V 50A TO263 |
|
IPB80N04S306ATMA1Rochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |