English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 150 V |
| 电流 - 连续漏极 (id) @ 25°c: | 150A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 7.2mOhm @ 70A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | - |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 5500 pF @ 75 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 320W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-263-2 |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SPB80N03S2L05Rochester Electronics |
80A, 30V, N-CHANNEL, MOSFET |
|
TK10E60W,S1VXToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 9.7A TO220 |
|
NTD3817NT4GRochester Electronics |
MOSFET N-CH 16V 7.6A/34.5A DPAK |
|
SQM50020EL_GE3Vishay / Siliconix |
MOSFET N-CH 60V 120A TO263 |
|
TSM260P02CX6 RFGTSC (Taiwan Semiconductor) |
MOSFET P-CHANNEL 20V 6.5A SOT26 |
|
SQM50P04-09L_GE3Vishay / Siliconix |
MOSFET P-CHANNEL 40V 50A TO263 |
|
IPB80N04S306ATMA1Rochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
MCH6421-TL-WRochester Electronics |
MOSFET N-CH 20V 5.5A MCPH6 |
|
NTTFS005N04CTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 17A/69A 8WDFN |
|
NTK3134NT5GRochester Electronics |
MOSFET N-CH 20V 750MA SOT723 |
|
STB13NK60ZT4STMicroelectronics |
MOSFET N-CH 600V 13A D2PAK |
|
SIHB24N65ET1-GE3Vishay / Siliconix |
MOSFET N-CH 650V 24A TO263 |
|
HUF76105SK8TRochester Electronics |
N-CHANNEL POWER MOSFET |
