English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 75 V |
| 电流 - 连续漏极 (id) @ 25°c: | 160A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 4.5mOhm @ 75A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 270 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 7500 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 300W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IRF2807ZSPBFRochester Electronics |
MOSFET N-CH 75V 75A TO263-3-2 |
|
BSO303SPRochester Electronics |
P-CHANNEL POWER MOSFET |
|
FDS6609ARochester Electronics |
MOSFET P-CH 30V 6.3A 8SOIC |
|
IXFH150N15PWickmann / Littelfuse |
MOSFET N-CH 150V 150A TO247AD |
|
PMF290XN,115Rochester Electronics |
MOSFET N-CH 20V 1A SOT323-3 |
|
IRLU3110ZPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 42A IPAK |
|
BSS308PEH6327XTSA1IR (Infineon Technologies) |
MOSFET P-CH 30V 2A SOT23-3 |
|
STF18NM80STMicroelectronics |
MOSFET N-CH 800V 17A TO220FP |
|
TK1R4F04PB,LXGQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 160A TO220SM |
|
IPLK70R1K2P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 700V TDSON-8 |
|
RSQ015N06HZGTRROHM Semiconductor |
MOSFET N-CH 60V 1.5A TSMT6 |
|
IRFH5015TRPBFIR (Infineon Technologies) |
MOSFET N-CH 150V 10A/56A 8PQFN |
|
IPA90R800C3XKSA2IR (Infineon Technologies) |
MOSFET N-CH 900V 6.9A TO220 |
