类型 | 描述 |
---|---|
系列: | PowerTrench® |
包裹: | Bulk |
零件状态: | Obsolete |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 14.5A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 6mOhm @ 14.5A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 63 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 2.51 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 2.5W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | 8-SOIC |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
TBB1005EMTL-HRochester Electronics |
RF N-CHANNEL MOSFET |
|
STL60P4LLF6STMicroelectronics |
MOSFET P-CH 40V 60A POWERFLAT |
|
TK39J60W,S1VQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 38.8A TO3P |
|
BUK9Y65-100E,115Nexperia |
MOSFET N-CH 100V 19A LFPAK56 |
|
NTP90N02Rochester Electronics |
MOSFET N-CH 24V 90A TO220AB |
|
TK16A60W,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 15.8A TO220 |
|
FQA13N80Rochester Electronics |
MOSFET N-CH 800V 12.6A TO3PN |
|
CMLDM8120 TRCentral Semiconductor |
MOSFET P-CH 20V 860MA SOT563 |
|
SIHA21N60EF-E3Vishay / Siliconix |
MOSFET N-CH 600V 21A TO220 |
|
IRFR18N15DPBF-INFRochester Electronics |
HEXFET SMPS POWER MOSFET |
|
NTD40N03R-1GRochester Electronics |
MOSFET N-CH 25V 7.8A/32A IPAK |
|
SI4401BDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 40V 8.7A 8SO |
|
SIHH27N60EF-T1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 29A PPAK 8 X 8 |