







 
                            PNP -100MA -400V MIDDLE POWER TR
 
                            MOSFET N-CH 150V 128A TO220AB
 
                            CONN HDR POST 53POS TIN
 
                            SENSOR 75PSIS M20 4-20MA
| 类型 | 描述 | 
|---|---|
| 系列: | ThunderFET® | 
| 包裹: | Tube | 
| 零件状态: | Active | 
| 场效应管类型: | N-Channel | 
| 技术: | MOSFET (Metal Oxide) | 
| 漏源电压 (vdss): | 150 V | 
| 电流 - 连续漏极 (id) @ 25°c: | 128A (Tc) | 
| 驱动电压(最大 rds on,最小 rds on): | 7.5V, 10V | 
| rds on (max) @ id, vgs: | 9.4mOhm @ 30A, 10V | 
| vgs(th) (最大值) @ id: | 5V @ 250µA | 
| 栅极电荷 (qg) (max) @ vgs: | 95 nC @ 10 V | 
| vgs (最大值): | ±20V | 
| 输入电容 (ciss) (max) @ vds: | 3425 pF @ 75 V | 
| 场效应管特征: | - | 
| 功耗(最大值): | 375W (Tc) | 
| 工作温度: | -55°C ~ 175°C (TJ) | 
| 安装类型: | Through Hole | 
| 供应商设备包: | TO-220AB | 
| 包/箱: | TO-220-3 | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | IPA60R230P6Rochester Electronics | IPA60R230 - 600V COOLMOS N-CHANN | 
|   | FDMS0302SRochester Electronics | MOSFET N-CH 30V 29A/49A 8PQFN | 
|   | SQ3456BEV-T1_GE3Vishay / Siliconix | MOSFET N-CH 30V 7.8A 6TSOP | 
|   | BUK9E4R4-80E,127Rochester Electronics | MOSFET N-CH 80V 120A I2PAK | 
|   | VN10KN3-G-P013Roving Networks / Microchip Technology | MOSFET N-CH 60V 310MA TO92-3 | 
|   | FDY301NZSanyo Semiconductor/ON Semiconductor | MOSFET N-CH 20V 200MA SC89-3 | 
|   | IRLR3705ZTRPBFIR (Infineon Technologies) | MOSFET N-CH 55V 42A DPAK | 
|   | IRFU5410PBFIR (Infineon Technologies) | MOSFET P-CH 100V 13A IPAK | 
|   | AUIRF1404ZIR (Infineon Technologies) | MOSFET N-CH 40V 160A TO220AB | 
|   | SIS410DN-T1-GE3Vishay / Siliconix | MOSFET N-CH 20V 35A PPAK 1212-8 | 
|   | SCT3080KLHRC11ROHM Semiconductor | SICFET N-CH 1200V 31A TO247N | 
|   | BSC070N10NS5SCATMA1IR (Infineon Technologies) | MOSFET N-CH 100V 14A/82A 8SWSON | 
|   | UPA2718GR-E2-ATRochester Electronics | P-CHANNEL POWER MOSFET |