类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 3.1A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 1.2Ohm @ 1.9A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 8.7 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 200 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 2.5W (Ta), 25W (Tc) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-251AA |
包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
NTK3139PT5GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 660MA SOT723 |
|
DMN1014UFDF-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 12V 8A 6UDFN |
|
PSMN2R9-25YLC,115Nexperia |
MOSFET N-CH 25V 100A LFPAK56 |
|
APT12067LFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 18A TO264 |
|
IPW50R199CPRochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDP3205Rochester Electronics |
MOSFET N-CH 55V 100A TO220-3 |
|
IPD60R380P6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 10.6A TO252-3 |
|
CEDM7001VL TR PBFREECentral Semiconductor |
MOSFET N-CH 20V 100MA SOT883VL |
|
MSC015SMA070SRoving Networks / Microchip Technology |
SICFET N-CH 700V 166A D3PAK |
|
CPH6311-TL-ERochester Electronics |
MOSFET P-CH 20V 5A 6CPH |
|
RU1C001ZPTLROHM Semiconductor |
MOSFET P-CH 20V 100MA UMT3F |
|
SPD03N60C3ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 3.2A TO252-3 |
|
SIHD5N50D-GE3Vishay / Siliconix |
MOSFET N-CH 500V 5.3A TO252AA |