English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | TrenchMOS™ |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.45mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 130 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 9.58 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 324W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SN7002NH6433XTMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 200MA SOT23-3 |
|
SIHP12N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 12A TO220AB |
|
DIT050N06Diotec Semiconductor |
MOSFET N-CH 60V 50A TO220AB |
|
FQD1N60TFRochester Electronics |
MOSFET N-CH 600V 1A DPAK |
|
DN2625K4-GRoving Networks / Microchip Technology |
MOSFET N-CH 250V 1.1A TO252 |
|
NTMYS5D3N04CTWGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 19A/71A 4LFPAK |
|
2SK1519-ERochester Electronics |
N-CHANNEL POWER MOSFET |
|
DMN3010LK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 13.1A/43A TO252 |
|
SIHB22N60ET1-GE3Vishay / Siliconix |
MOSFET N-CH 600V 21A TO263 |
|
STY60NM50STMicroelectronics |
MOSFET N-CH 500V 60A MAX247 |
|
FQP50N06LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 52.4A TO220-3 |
|
ZDX130N50ROHM Semiconductor |
MOSFET N-CH 500V 13A TO220FM |
|
HUF76445S3STRochester Electronics |
MOSFET N-CH 60V 75A D2PAK |
