类型 | 描述 |
---|---|
系列: | * |
包裹: | Bulk |
零件状态: | Active |
场效应管类型: | - |
技术: | - |
漏源电压 (vdss): | - |
电流 - 连续漏极 (id) @ 25°c: | - |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | - |
vgs(th) (最大值) @ id: | - |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | - |
输入电容 (ciss) (max) @ vds: | - |
场效应管特征: | - |
功耗(最大值): | - |
工作温度: | - |
安装类型: | - |
供应商设备包: | - |
包/箱: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AO4404BAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 8.5A 8SOIC |
|
IPA60R360CFD7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 5A TO220 |
|
SPW24N60CFDFKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 21.7A TO247-3 |
|
TSM9ND50CITSC (Taiwan Semiconductor) |
MOSFET N-CH 500V 9A ITO220 |
|
IRFPC50APBFVishay / Siliconix |
MOSFET N-CH 600V 11A TO247-3 |
|
IXFA56N30X3Wickmann / Littelfuse |
MOSFET N-CH 300V 56A TO263AA |
|
IPD060N03LGRochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
STP6N80K5STMicroelectronics |
MOSFET N-CH 800V 4.5A TO220 |
|
IPW65R035CFD7AXKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 63A TO247-3-41 |
|
PMPB11EN,115Nexperia |
MOSFET N-CH 30V 9A DFN2020MD-6 |
|
IRFB7534PBFIR (Infineon Technologies) |
MOSFET N-CH 60V 195A TO220AB |
|
IXFR80N50PWickmann / Littelfuse |
MOSFET N-CH 500V 45A ISOPLUS247 |
|
SIA413DJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 12V 12A PPAK SC70-6 |