English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | DeepGATE™, STripFET™ H6 |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 56mOhm @ 2.5A, 10V |
| vgs(th) (最大值) @ id: | 2.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 6 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 639 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 2.7W (Ta) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RSD200N05TLROHM Semiconductor |
MOSFET N-CH 45V 20A CPT3 |
|
FDD86380-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 50A DPAK |
|
MAX8704EUBRochester Electronics |
LOW-VOLTAGE LINEAR REGULATOR |
|
SCT20N120HSTMicroelectronics |
SICFET N-CH 1200V 20A H2PAK-2 |
|
RM18P100HDERectron USA |
MOSFET P-CH 100V 18A TO263-2 |
|
EPC2218EPC |
GANFET N-CH 100V DIE |
|
IPI60R380C6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 10.6A TO262-3 |
|
PSMN5R8-30LL,115Rochester Electronics |
MOSFET N-CH 30V 40A 8DFN |
|
MCH6431-P-TL-HRochester Electronics |
MOSFET N-CH 30V 5A MCPH6 |
|
STD3NK100ZSTMicroelectronics |
MOSFET N-CH 1000V 2.5A DPAK |
|
IXFQ50N50P3Wickmann / Littelfuse |
MOSFET N-CH 500V 50A TO3P |
|
IRLR024TRPBFVishay / Siliconix |
MOSFET N-CH 60V 14A DPAK |
|
STB30NF10T4STMicroelectronics |
MOSFET N-CH 100V 35A D2PAK |
