类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, CoolMOS™ CFD7A |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 650 V |
电流 - 连续漏极 (id) @ 25°c: | 63A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 35mOhm @ 35.8A, 10V |
vgs(th) (最大值) @ id: | 4.5V @ 1.79mA |
栅极电荷 (qg) (max) @ vgs: | 145 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 7149 pF @ 400 V |
场效应管特征: | - |
功耗(最大值): | 305W (Tc) |
工作温度: | -40°C ~ 150°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | PG-TO247-3-41 |
包/箱: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SI7116DN-T1-E3Vishay / Siliconix |
MOSFET N-CH 40V 10.5A PPAK1212-8 |
|
TPN1R603PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 80A 8TSON |
|
SIHP180N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 19A TO220AB |
|
FQPF16N25CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 15.6A TO220F |
|
BUK6C3R3-75C,118Rochester Electronics |
MOSFET N-CH 75V 181A D2PAK |
|
FDAF59N30Rochester Electronics |
MOSFET N-CH 300V 34A TO3PF |
|
STF35N65DM2STMicroelectronics |
MOSFET N-CH 650V 32A TO220FP |
|
TK40S10K3Z(T6L1,NQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 100V 40A DPAK |
|
IPC90N04S5L3R3ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 90A 8TDSON-34 |
|
SI7439DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 150V 3A PPAK SO-8 |
|
IRLML9301TRPBFIR (Infineon Technologies) |
MOSFET P-CH 30V 3.6A SOT23 |
|
IRFD9110Rochester Electronics |
0.7A 100V 1.200 OHM P-CHANNEL |
|
SI4463CDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 13.6A/49A 8SO |