MOSFET P-CH 20V 6A SOT23F
FIXED IND 1.8UH 217MA 950 MOHM
类型 | 描述 |
---|---|
系列: | U-MOSVI |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 20 V |
电流 - 连续漏极 (id) @ 25°c: | 6A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 1.5V, 4.5V |
rds on (max) @ id, vgs: | 29.8mOhm @ 3A, 4.5V |
vgs(th) (最大值) @ id: | 1V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 12.8 nC @ 4.5 V |
vgs (最大值): | +6V, -8V |
输入电容 (ciss) (max) @ vds: | 840 pF @ 10 V |
场效应管特征: | - |
功耗(最大值): | 1W (Ta) |
工作温度: | 150°C |
安装类型: | Surface Mount |
供应商设备包: | SOT-23F |
包/箱: | SOT-23-3 Flat Leads |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IPB042N03LGATMA1Rochester Electronics |
MOSFET N-CH 30V 70A TO263-3-2 |
|
FDB8832Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 34A/80A TO263AB |
|
RJK0366DPA-00#J0Rochester Electronics |
MOSFET N-CH 30V 25A 8WPAK |
|
SIJA58DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
|
IRF620BRochester Electronics |
N-CHANNEL POWER MOSFET |
|
STF25N80K5STMicroelectronics |
MOSFET N-CH 800V 19.5A TO220FP |
|
IPB80N03S4L02ATMA1Rochester Electronics |
MOSFET N-CH 30V 80A TO263-3-2 |
|
NP109N055PUK-E1-AYRenesas Electronics America |
MOSFET N-CH 55V 110A TO263 |
|
TK560P60Y,RQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CHANNEL 600V 7A DPAK |
|
SI2316DS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 2.9A SOT23-3 |
|
RJK0702DPP-E0#T2Rochester Electronics |
MOSFET N-CH 75V 90A TO220FP |
|
CSD17483F4TTexas Instruments |
MOSFET N-CH 30V 1.5A 3PICOSTAR |
|
IPC100N04S51R9ATMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 100A 8TDSON-34 |