类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 100 V |
电流 - 连续漏极 (id) @ 25°c: | 170mA (Ta) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 6Ohm @ 100mA, 10V |
vgs(th) (最大值) @ id: | 2.8V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 20 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 225mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-23-3 |
包/箱: | TO-236-3, SC-59, SOT-23-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
R6076ENZ1C9ROHM Semiconductor |
MOSFET N-CH 600V 76A TO247 |
|
DMG3404L-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 4.2A SOT23 |
|
APT10M11JVRU3Roving Networks / Microchip Technology |
MOSFET N-CH 100V 142A SOT227 |
|
SISS32ADN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 80V 17.4A/63A PPAK |
|
STL120N8F7STMicroelectronics |
MOSFET N-CH 80V 120A POWERFLAT |
|
IXTP30N25L2Wickmann / Littelfuse |
MOSFET N-CH 250V 30A TO220AB |
|
SIDR638DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 100A PPAK SO-8DC |
|
SI7336ADP-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 30A PPAK SO-8 |
|
STD35NF3LLT4STMicroelectronics |
MOSFET N-CH 30V 35A DPAK |
|
TSM018NB03CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 30V 29A/194A 8PDFN |
|
FDMS8027SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 18A/22A 8PQFN |
|
DMN3053L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 4A SOT23 |
|
ATP203-TL-HRochester Electronics |
MOSFET N-CH 30V 75A DPAK/ATPAK |