类型 | 描述 |
---|---|
系列: | STripFET™ F7 |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 80 V |
电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 10V |
rds on (max) @ id, vgs: | 4.4mOhm @ 11.5A, 10V |
vgs(th) (最大值) @ id: | 4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 60 nC @ 10 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 4570 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 4.8W (Ta), 140W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerFlat™ (5x6) |
包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IXTP30N25L2Wickmann / Littelfuse |
MOSFET N-CH 250V 30A TO220AB |
|
SIDR638DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 100A PPAK SO-8DC |
|
SI7336ADP-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 30A PPAK SO-8 |
|
STD35NF3LLT4STMicroelectronics |
MOSFET N-CH 30V 35A DPAK |
|
TSM018NB03CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 30V 29A/194A 8PDFN |
|
FDMS8027SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 18A/22A 8PQFN |
|
DMN3053L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 4A SOT23 |
|
ATP203-TL-HRochester Electronics |
MOSFET N-CH 30V 75A DPAK/ATPAK |
|
BUK9Y07-30B,115Nexperia |
MOSFET N-CH 30V 75A LFPAK56 |
|
IRLIZ44GVishay / Siliconix |
MOSFET N-CH 60V 30A TO220-3 |
|
TPN5900CNH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 150V 9A 8TSON |
|
STU80N4F6STMicroelectronics |
MOSFET N-CH 40V 80A TO251 |
|
AUIRF8736M2TRIR (Infineon Technologies) |
MOSFET N-CH 40V 27A DIRECTFET |