English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | UltraFET™ |
| 包裹: | Bulk |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 75 V |
| 电流 - 连续漏极 (id) @ 25°c: | 9A (Ta), 50A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 6V, 10V |
| rds on (max) @ id, vgs: | 16mOhm @ 50A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 47 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1.874 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 135W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DPAK |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPW60R080P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 37A TO247-3 |
|
DMN2004WK-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 540MA SOT323 |
|
2N7002KD1Rectron USA |
MOSFET N-CH 60V 350MA DFN1006-3 |
|
STB60NF06T4STMicroelectronics |
MOSFET N-CH 60V 60A D2PAK |
|
STD45N10F7STMicroelectronics |
MOSFET N-CH 100V 45A DPAK |
|
NDF06N60ZG-001Rochester Electronics |
MOSFET N-CH 600V 7.1A TO-220FP |
|
STP62NS04ZSTMicroelectronics |
MOSFET N-CH 33V 62A TO220AB |
|
BUK6211-75C,118-NEXRochester Electronics |
MOSFET N-CH 75V 74A DPAK |
|
NP90N04VUK-E1-AYRenesas Electronics America |
MOSFET N-CH 40V 90A TO252 |
|
FQB5N60CTMRochester Electronics |
4.5A, 600V, 2OHM, N CHANNEL , D2 |
|
DMP1011UCB9-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 8V 10A U-WLB1515-9 |
|
RVQ040N05TRROHM Semiconductor |
MOSFET N-CH 45V 4A TSMT6 |
|
2N7002KARectron USA |
MOSFET N-CHANNEL 60V 115MA SOT23 |
