English
简体中文
MOSFET N-CH 600V 11A D2PAK
IRDA TXRX MOD 115.2KBPS 7-SMD
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | SuperFET™ |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 11A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 380mOhm @ 5.5A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 52 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1490 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 125W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D²PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
RD3L08BGNTLROHM Semiconductor |
MOSFET N-CH 60V 80A TO252 |
|
FQP6N90CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 900V 6A TO220-3 |
|
IPD65R950CFDATMA2IR (Infineon Technologies) |
MOSFET N-CH 650V 3.9A TO252-3 |
|
CSD17311Q5Texas Instruments |
MOSFET N-CH 30V 32A/100A 8VSON |
|
BUK9Y09-40B,115Nexperia |
MOSFET N-CH 40V 75A LFPAK56 |
|
NP160N055TUK-E1-AYRenesas Electronics America |
MOSFET N-CH 55V 160A TO263-7 |
|
SMBF1046LT1Rochester Electronics |
NFET SOT23 SPECIAL TR |
|
NVTFS6H880NWFTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 6.3A/21A 8WDFN |
|
SIHP21N60EF-BE3Vishay / Siliconix |
MOSFET N-CH 600V 21A TO220AB |
|
NTD4804NA-1GRochester Electronics |
NTD4804NA-1G |
|
FDD20AN06A0Rochester Electronics |
MOSFET N-CH 60V 8A/45A TO252AA |
|
SPW11N60C3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
STP8NK100ZSTMicroelectronics |
MOSFET N-CH 1000V 6.5A TO220AB |