CAP TANT 10UF 10% 20V 2312
MOSFET N-CH 30V 7A 6UDFN
IC REG LINEAR 8V 1.5A TO252-3
2 AXIS HI/HI YZ
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 7A (Ta) |
驱动电压(最大 rds on,最小 rds on): | 2.5V, 10V |
rds on (max) @ id, vgs: | 28mOhm @ 4A, 10V |
vgs(th) (最大值) @ id: | 1.4V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 13.3 nC @ 10 V |
vgs (最大值): | ±12V |
输入电容 (ciss) (max) @ vds: | 570 pF @ 15 V |
场效应管特征: | - |
功耗(最大值): | 2.1W (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | U-DFN2020-6 (Type F) |
包/箱: | 6-UDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PSMN013-100PS,127Nexperia |
MOSFET N-CH 100V 68A TO220AB |
|
SQ3469EV-T1_GE3Vishay / Siliconix |
MOSFET P-CH 20V 8A 6TSOP |
|
SIR104DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 100V 18.3A/79A PPAK |
|
IPL65R099C7AUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 21A 4VSON |
|
STF34NM60NDSTMicroelectronics |
MOSFET N-CH 600V 29A TO220FP |
|
IRFR110TRLPBFVishay / Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
|
STW45N60DM2AGSTMicroelectronics |
MOSFET N-CH 600V 34A TO247 |
|
IRFR3607PBFRochester Electronics |
MOSFET N-CH 75V 56A DPAK |
|
STP5NK100ZSTMicroelectronics |
MOSFET N-CH 1000V 3.5A TO220AB |
|
IPLK60R360PFD7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 13A THIN-PAK |
|
BSS192,115Nexperia |
MOSFET P-CH 240V 200MA SOT89 |
|
HUF75345P3Rochester Electronics |
MOSFET N-CH 55V 75A TO220-3 |
|
FDB039N06Rochester Electronics |
MOSFET N-CH 60V 120A TO263 |