类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, STripFET™ |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 40 V |
电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 5V, 10V |
rds on (max) @ id, vgs: | 3.6mOhm @ 13A, 10V |
vgs(th) (最大值) @ id: | 3V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 80 nC @ 10 V |
vgs (最大值): | 40V |
输入电容 (ciss) (max) @ vds: | 4260 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 96W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PowerFlat™ (5x6) |
包/箱: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SI1022R-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 330MA SC75A |
|
SSM3J118TU(TE85L)Toshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 1.4A UFM |
|
PSMN030-60YS,115Nexperia |
MOSFET N-CH 60V 29A LFPAK56 |
|
R6520ENJTLROHM Semiconductor |
MOSFET N-CH 650V 20A LPTS |
|
APT6010JFLLRoving Networks / Microchip Technology |
MOSFET N-CH 600V 47A ISOTOP |
|
TSM300NB06CR RLGTSC (Taiwan Semiconductor) |
MOSFET N-CH 60V 6A/27A 8PDFN |
|
2SK4066-1ERochester Electronics |
MOSFET N-CH 60V 100A TO262-3 |
|
IPT65R105G7XTMA1Rochester Electronics |
MOSFET N-CH 650V 24A HSOF-8-2 |
|
FQD2N60CTFRochester Electronics |
MOSFET N-CH 600V 1.9A DPAK |
|
FDG327NZRochester Electronics |
MOSFET N-CH 20V 1.5A SC88 |
|
TN0702N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 20V 530MA TO92-3 |
|
AOT7S65LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 7A TO220 |
|
TN0604N3-G-P013Roving Networks / Microchip Technology |
MOSFET N-CH 40V 700MA TO92-3 |