English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | PowerTrench® |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.5A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 90mOhm @ 1.5A, 4.5V |
| vgs(th) (最大值) @ id: | 1.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 6 nC @ 4.5 V |
| vgs (最大值): | ±8V |
| 输入电容 (ciss) (max) @ vds: | 412 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 420mW (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SC-88 (SC-70-6) |
| 包/箱: | 6-TSSOP, SC-88, SOT-363 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TN0702N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 20V 530MA TO92-3 |
|
AOT7S65LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 7A TO220 |
|
TN0604N3-G-P013Roving Networks / Microchip Technology |
MOSFET N-CH 40V 700MA TO92-3 |
|
BSO130N03MSGRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IPB80N08S2L07ATMA1IR (Infineon Technologies) |
MOSFET N-CH 75V 80A TO263-3 |
|
SSM6K513NU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 30V 15A 6UDFNB |
|
NX3008PBKMB,315Rochester Electronics |
MOSFET P-CH 30V 300MA DFN1006B-3 |
|
IPU80R750P7AKMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 7A TO251-3 |
|
STFI7N80K5STMicroelectronics |
MOSFET N-CH 800V 6A I2PAKFP |
|
FQI19N20TURochester Electronics |
MOSFET N-CH 200V 19.4A I2PAK |
|
STP9NK60ZSTMicroelectronics |
MOSFET N-CH 600V 7A TO220AB |
|
IPB80P04P4L04ATMA2IR (Infineon Technologies) |
MOSFET P-CH 40V 80A TO263-3 |
|
MCU15N10A-TPMicro Commercial Components (MCC) |
MOSFET N-CH 100V 15A DPAK |
