English
简体中文
CAP TANT 68UF 20% 4V 1206
MOSFET N-CH 80V 1.1A DFN1010D-3
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 80 V |
| 电流 - 连续漏极 (id) @ 25°c: | 1.1A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 450mOhm @ 1.1A, 10V |
| vgs(th) (最大值) @ id: | 2.7V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 4.5 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 130 pF @ 40 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 400mW (Ta), 6.25W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DFN1010D-3 |
| 包/箱: | 3-XDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
SI7460DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 60V 11A PPAK SO-8 |
|
STFI24N60M2STMicroelectronics |
MOSFET N CH 600V 18A TO281 |
|
FDR840PRochester Electronics |
MOSFET P-CH 20V 10A SUPERSOT8 |
|
CMUDM8004 TR PBFREECentral Semiconductor |
MOSFET P-CH 30V 450MA SOT523 |
|
IXTA130N15X4-7Wickmann / Littelfuse |
MOSFET N-CH 150V 130A TO263-7 |
|
TK9A45D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 450V 9A TO220SIS |
|
AOD468Alpha and Omega Semiconductor, Inc. |
MOSFET N CH 300V 11.5A TO252 |
|
IRFBF30Vishay / Siliconix |
MOSFET N-CH 900V 3.6A TO220AB |
|
SK8603170LPanasonic |
MOSFET N-CH 30V 20A/59A 8HSO |
|
HUF76409D3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPI65R420CFDRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXTX46N50LWickmann / Littelfuse |
MOSFET N-CH 500V 46A PLUS247-3 |
|
NTD18N06-1GRochester Electronics |
MOSFET N-CH 60V 18A IPAK |