类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Active |
场效应管类型: | P-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 50 V |
电流 - 连续漏极 (id) @ 25°c: | 130mA (Ta) |
驱动电压(最大 rds on,最小 rds on): | 5V |
rds on (max) @ id, vgs: | 10Ohm @ 100mA, 5V |
vgs(th) (最大值) @ id: | 2V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | - |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 45 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 200mW (Ta) |
工作温度: | -55°C ~ 150°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | SOT-323 |
包/箱: | SC-70, SOT-323 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRFH6200TRPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 49A/100A 8PQFN |
|
RUC002N05HZGT116ROHM Semiconductor |
MOSFET N-CH 50V 200MA SST3 |
|
DMN53D0L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 50V 500MA SOT23 |
|
STD7ANM60NSTMicroelectronics |
MOSFET N-CH 600V 5A DPAK |
|
IRF510PBF-BE3Vishay / Siliconix |
MOSFET N-CH 100V 5.6A TO220AB |
|
FDM3622Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 4.4A 8MLP |
|
IRFD214PBFVishay / Siliconix |
MOSFET N-CH 250V 450MA 4DIP |
|
STH240N75F3-2STMicroelectronics |
MOSFET N CH 75V 180A H2PAK-2 |
|
SI1416EDH-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 3.9A SOT-363 |
|
STF40NF06STMicroelectronics |
MOSFET N-CH 60V 23A TO220FP |
|
AOB12N65LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 650V 12A TO263 |
|
IRLR3636TRLPBFIR (Infineon Technologies) |
MOSFET N-CH 60V 50A DPAK |
|
IPI65R600C6Rochester Electronics |
N-CHANNEL POWER MOSFET |