类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q101, TrenchMOS™ |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 75 V |
电流 - 连续漏极 (id) @ 25°c: | 77A (Ta) |
驱动电压(最大 rds on,最小 rds on): | - |
rds on (max) @ id, vgs: | 11.7mOhm @ 15A, 10V |
vgs(th) (最大值) @ id: | 2.8V @ 1mA |
栅极电荷 (qg) (max) @ vgs: | 81 nC @ 10 V |
vgs (最大值): | ±16V |
输入电容 (ciss) (max) @ vds: | 5251 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 158W (Ta) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220AB |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IRL510PBFVishay / Siliconix |
MOSFET N-CH 100V 5.6A TO220AB |
|
IPB47N10SL26ATMA1Rochester Electronics |
MOSFET N-CH 100V 47A TO263-3 |
|
APT30M36B2FLLGRoving Networks / Microchip Technology |
MOSFET N-CH 300V 84A T-MAX |
|
PMV65ENEARNexperia |
MOSFET N-CH 40V 2.7A TO236AB |
|
IPP114N03LGHKSA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NIMD6302R2Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IRF8010PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 80A TO220AB |
|
DMN55D0UTQ-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 50V 160MA SOT-523 |
|
IPP80N06S207AKSA1Rochester Electronics |
MOSFET N-CH 55V 80A TO220-3-1 |
|
FDZ661PZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 2.6A 4WLCSP |
|
IXTT10N100D2Wickmann / Littelfuse |
MOSFET N-CH 1000V 10A TO268 |
|
AUIRF4905SIR (Infineon Technologies) |
MOSFET P-CH 55V 42A D2PAK |
|
IPD50R399CPBTMA1Rochester Electronics |
MOSFET N-CH 500V 9A TO252-3 |