English
简体中文
MOSFET N-CH 650V 10.9A VSON-4-1
DIODE GEN PURP 800V 6A DO203AA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | CoolMOS™ CFD2 |
| 包裹: | Bulk |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 650 V |
| 电流 - 连续漏极 (id) @ 25°c: | 10.9A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | - |
| rds on (max) @ id, vgs: | 340mOhm @ 4.4A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 400µA |
| 栅极电荷 (qg) (max) @ vgs: | 41 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1100 pF @ 100 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 104.2W (Tc) |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-VSON-4-1 |
| 包/箱: | 4-PowerTSFN |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TPH2R306NH,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 60A 8SOP |
|
STW75N60M6-4STMicroelectronics |
MOSFET N-CH 600V 72A TO247-4 |
|
ISL9N315AD3Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SPP15P10PHXKSA1Rochester Electronics |
MOSFET P-CH 100V 15A TO220-3-1 |
|
SI4403CDY-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 13.4A 8SO |
|
DMP3036SFG-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 8.7A PWRDI3333-8 |
|
IRF7458TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 14A 8SO |
|
DMT6012LFV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 43.3A PWRDI3333 |
|
AONR21117Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 20V 26.5A/34A 8DFN |
|
MPF6659RLRARochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
ZVN2120GTAZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 200V 320MA SOT223 |
|
TK16G60W,RVQToshiba Electronic Devices and Storage Corporation |
MOSFET N CH 600V 15.8A D2PAK |
|
IXFH12N80PWickmann / Littelfuse |
MOSFET N-CH 800V 12A TO247AD |