类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (vdss): | 30 V |
电流 - 连续漏极 (id) @ 25°c: | 120A (Tc) |
驱动电压(最大 rds on,最小 rds on): | 4.5V, 10V |
rds on (max) @ id, vgs: | 2.4mOhm @ 60A, 10V |
vgs(th) (最大值) @ id: | 2.5V @ 250µA |
栅极电荷 (qg) (max) @ vgs: | 53 nC @ 4.5 V |
vgs (最大值): | ±20V |
输入电容 (ciss) (max) @ vds: | 5200 pF @ 25 V |
场效应管特征: | - |
功耗(最大值): | 176.5W (Tc) |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Through Hole |
供应商设备包: | TO-220 |
包/箱: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
IPLK70R2K0P7ATMA1Rochester Electronics |
IPLK70R2K0P7 - 700V COOLMOS P7 |
![]() |
2N7002E-T1-GE3Vishay / Siliconix |
MOSFET N-CH 60V 240MA TO236 |
![]() |
APTM50UM09FAGRoving Networks / Microchip Technology |
MOSFET N-CH 500V 497A SP6 |
![]() |
FDU8770Rochester Electronics |
MOSFET N-CH 25V 35A IPAK |
![]() |
AOWF600A60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 8A TO262F |
![]() |
DMTH10H009LPS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V PWRDI5060 |
![]() |
RQ3G100GNTBROHM Semiconductor |
MOSFET N-CH 40V 10A 8HSMT |
![]() |
SI3401A-TPMicro Commercial Components (MCC) |
MOSFET P-CH 30V 4.2A SOT23 |
![]() |
SI7390DP-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 9A PPAK SO-8 |
![]() |
CPH6603-TL-ERochester Electronics |
P-CHANNEL SILICON MOSFET |
![]() |
CSD18501Q5ATexas Instruments |
MOSFET N-CH 40V 22A/100A 8VSON |
![]() |
NTMFS4937NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 10.2A/70A 5DFN |
![]() |
FDPF5N50NZURochester Electronics |
MOSFET N-CH 500V 3.9A TO220F |