English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR)Cut Tape (CT) |
| 零件状态: | Active |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 16A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 1.8V, 4.5V |
| rds on (max) @ id, vgs: | 19mOhm @ 10A, 4.5V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 72.8 nC @ 10 V |
| vgs (最大值): | ±10V |
| 输入电容 (ciss) (max) @ vds: | 2992 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 18W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 6-DFN (2x2) |
| 包/箱: | 6-UDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IPS65R600E6AKMA1Rochester Electronics |
PFET, 650V, 0.6OHM, 1-ELEMENT, N |
|
SI8429DB-T1-E1Vishay / Siliconix |
MOSFET P-CH 8V 11.7A 4MICROFOOT |
|
MCU80N06-TPMicro Commercial Components (MCC) |
MOSFET N-CH 60V 80A DPAK |
|
NTHL033N65S3HFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 70A TO247-3 |
|
TK18A50D(STA4,Q,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 18A TO220SIS |
|
BSC13DN30NSFDATMA1IR (Infineon Technologies) |
MOSFET N-CH 300V 16A TDSON-8-1 |
|
FDP2710Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 50A TO220-3 |
|
BSP250,135Nexperia |
MOSFET P-CH 30V 3A SOT223 |
|
MCU18P10Y-TPMicro Commercial Components (MCC) |
MOSFET P-CH 100V 18A DPAK |
|
IXTR90P20PWickmann / Littelfuse |
MOSFET P-CH 200V 53A ISOPLUS247 |
|
RHP030N03T100ROHM Semiconductor |
MOSFET N-CH 30V 3A MPT3 |
|
DMP2006UFGQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V PWRDI3333 |
|
GA05JT12-263GeneSiC Semiconductor |
TRANS SJT 1200V 15A D2PAK |
