English
简体中文
RES SMD 22.1KOHM 0.1% 0.15W 0603
CAP CER 0.018UF 25V U2J 1812
MOSFET N-CHANNEL 250V 60A TO3P
IC GATE DRVR LOW-SIDE 8SOIC
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | HiPerFET™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 250 V |
| 电流 - 连续漏极 (id) @ 25°c: | 60A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 23mOhm @ 30A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 1.5mA |
| 栅极电荷 (qg) (max) @ vgs: | 50 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 3610 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 320W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-3P |
| 包/箱: | TO-3P-3, SC-65-3 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
FDU6512ARochester Electronics |
MOSFET N-CH 20V 10.7A/36A IPAK |
|
SI7116DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 10.5A PPAK1212-8 |
|
TPW1R104PB,L1XHQToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 120A 8DSOP |
|
NVD6414ANT4GRochester Electronics |
32A, 100V, 0.037OHM, N-CHANNEL, |
|
SSM5G10TU(TE85L,F)Toshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 1.5A UFV |
|
HAT1035R-EL-ERochester Electronics |
P-CHANNEL POWER MOSFET |
|
SIR426DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 30A PPAK SO-8 |
|
FDS8840NZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 18.6A 8SOIC |
|
NP100P06PDG-E1-AYRenesas Electronics America |
MOSFET P-CH 60V 100A TO263 |
|
IPB060N15N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 150V 136A TO263-7 |
|
QS6U24TRROHM Semiconductor |
MOSFET P-CH 30V 1A TSMT6 |
|
IPD60R950C6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 4.4A TO252-3 |
|
NP100P04PLG-E1-AYRenesas Electronics America |
MOSFET P-CH 40V 100A TO263 |